Wafer-Level Kerr Effect Measurement Instrument
This system uses polar MOKE to non - destructively analyze magnetic properties of wafer stacks before and after patterning with full - field measurement capability.
CONTACT US1. Product Overview
The Wafer-Level Kerr Effect Measurement Instrument delivers powerful vertical and in-plane magnetic field capabilities for advanced wafer-level magnetic characterization.
- Magnetic fields: up to 2.5 T vertical and 1.3 T in-plane, enabling precise flipping of the free, reference, and pinned layers in vertical anisotropic MRAM film stacks.
- Ultra-high Kerr detection sensitivity: capable of simultaneously characterizing subtle magnetic changes in multiple film layers.
- By combining laser point-by-point detection with scanning imaging, the system rapidly generates global wafer magnetic property maps, assisting in process optimization and yield control.
Measurement results of hysteresis loops of perpendicular anisotropic magnetic tunnel conjunctival stack
Coercive field characteristic distribution diagram of 8-inch perpendicular magnetic anisotropy wafer
2. Key Features
- Supports wafer sizes up to 12 inches, with full backward compatibility and fragment testing.
- High field capability: maximum vertical field ±2.5 T, with 1 μT resolution.
- Kerr rotation detection sensitivity better than 0.3 mdeg (RMS), ideal for multilayer film stack characterization.
- Precise sample positioning: repeat accuracy better than ±1 μm; static jitter ≤ ±0.25 μm.
- Flexible scanning modes: single point, array, ring distribution, or custom position lists.
- Options for manual loading or fully automated operation for both R&D and production environments.
3. Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Vertical Magnetic Field | ±2.5 T |
| Maximum In-Plane Magnetic Field | 1.3 T |
| Magnetic Field Resolution | 1 μT |
| Kerr Rotation Sensitivity | ≤ 0.3 mdeg (RMS) |
| Maximum Wafer Size | 12-inch (backward compatible) |
| Positioning Accuracy | ±1 μm |
| Static Jitter | ≤ ±0.25 μm |
4. Testable Samples & Applications
- Vertical anisotropic MRAM stacks and device arrays
- Perpendicular magnetic recording (PMR) disk media
- Multilayer film stacks for magnetic sensors
- Fragment or full-wafer magnetic testing
Applications include:
- Wafer-level hysteresis loop measurement
- Process optimization and quality control
- Layer-specific magnetic parameter extraction (Hc, Hex, Ms)
5. System Configuration
- Wafer-level stage with precision alignment
- High-field electromagnet (vertical and in-plane)
- Ultra-sensitive Kerr detection module
- Integrated laser scanning and imaging system
- Automated positioning and motion control unit
6. Software Functions
- Real-time data acquisition and processing
- Automatic hysteresis loop extraction for free and pinned layers
- Mapping and visualization of wafer-level magnetic properties
- Preset and customizable scanning patterns (single point, array, ring)
- Export functions for integration with R&D and production databases
7. Ordering Information
Model: Wafer-Level Kerr Effect Measurement Instrument
Standard Components: Wafer stage, electromagnet, Kerr optics, laser scanning module, software suite
8. Why Choose Cryomagtech
- Advanced Kerr effect measurement technology for wafer-level characterization
- Exceptional sensitivity and positioning accuracy
- Flexible system supporting both research and mass-production requirements
- Professional service and long-term technical support
9. Contact & Inquiry
For technical details, customization, or quotations, please contact:
Cryomagtech
🌐 www.cryomagtech.com
📧 edaystore@outlook.com